This paper analyses the physical characteristic of MOV and gives out its mathematical model by making it equivalent to inductance, resistance and diode three parts.

对金属氧化物变阻器的物理特性进行了分析，并完成了MOV元件的数学建模，将其等效为电感、电阻、二极管三部分。

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Its key idea is that integration of GTO with improved structure, antiparallel freewheeling diode and gate drive circuit, then connects its gate drive by low inductance.

它的关键思想是将改进结构的GTO与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接。

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In addition, the influence of the equivalent inductance, the equivalent resistance and time-jitters of the diode on the residual waveform of a half sinewave with attenuation is discussed.

还定量讨论了支配半个衰减正弦波残存波的等效电感、等效电阻和高压硅堆导通时间抖动的影响。

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